Title:
METHOD FOR METAL SILICATE FILM FORMATION AND RECORDING MEDIUM
Document Type and Number:
WIPO Patent Application WO/2007/043312
Kind Code:
A1
Abstract:
This invention provides a method for the formation of a highly dielectric film
on a silicon substrate, comprising the steps of treating the surface of the silicon
substrate with dilute hydrofluoric acid, feeding, after the dilute hydrofluoric
acid treatment step, an organometal material containing Hf and nitrogen onto
the surface of the silicon substrate to form nuclei of HfN, feeding, after the
nucleation step, an Hf-containing organometal material and an Si-containing
organic material onto the surface of the silicon substrate to form an Hf silicate
film by CVD.
Inventors:
AOYAMA SHINTARO (JP)
TAKAHASHI TSUYOSHI (JP)
SHIMOMURA KOUJI (JP)
ARUGA MIKI (JP)
TAKAHASHI TSUYOSHI (JP)
SHIMOMURA KOUJI (JP)
ARUGA MIKI (JP)
Application Number:
PCT/JP2006/318864
Publication Date:
April 19, 2007
Filing Date:
September 22, 2006
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
AOYAMA SHINTARO (JP)
TAKAHASHI TSUYOSHI (JP)
SHIMOMURA KOUJI (JP)
ARUGA MIKI (JP)
AOYAMA SHINTARO (JP)
TAKAHASHI TSUYOSHI (JP)
SHIMOMURA KOUJI (JP)
ARUGA MIKI (JP)
International Classes:
H01L21/316; H01L21/205; H01L21/31
Domestic Patent References:
| WO2005098961A1 | 2005-10-20 |
Foreign References:
| JP2004342775A | 2004-12-02 | |||
| JP2004303894A | 2004-10-28 |
Attorney, Agent or Firm:
ITOH, Tadahiko (Yebisu Garden Place Tower 20-3, Ebisu 4-Chom, Shibuya-Ku Tokyo 32, JP)
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