Title:
METHOD FOR PREPARING ALUMINUM NITRIDE CRYSTALS BY MEANS OF VAPOR TRANSPORT
Document Type and Number:
WIPO Patent Application WO/2023/125227
Kind Code:
A1
Abstract:
A method for preparing aluminum nitride crystals by means of vapor transport, comprising the following steps: firstly, fixing an aluminum nitride raw material onto the periphery of the inner wall of a crucible to define a crystal growth cavity, fixing aluminum nitride seed crystals in the middle position of the crystal growth cavity in the crucible, putting into a heating furnace the crucible loaded with the aluminum nitride raw material and the aluminum nitride seed crystals, switching to a pure nitrogen atmosphere as a growth atmosphere in the heating furnace, heating the crucible until the temperature therein reaches a preset temperature, adjusting temperatures to form a small temperature gradient around the seed crystals, with the temperatures decreasing in the direction from the raw material to the seed crystals, carrying out aluminum nitride single crystal growth, carrying out heat preservation for a period of time, then cooling to room temperature, and opening the crucible to obtain the aluminum nitride crystals.
Inventors:
JIN LEI (CN)
WU HONGLEI (CN)
QIN ZUOYAN (CN)
LI WENLIANG (CN)
WU HONGLEI (CN)
QIN ZUOYAN (CN)
LI WENLIANG (CN)
Application Number:
PCT/CN2022/141007
Publication Date:
July 06, 2023
Filing Date:
December 22, 2022
Export Citation:
Assignee:
UNIV SHENZHEN (CN)
International Classes:
C30B29/40; C30B23/02
Foreign References:
| CN114250517A | 2022-03-29 | |||
| CN113622018A | 2021-11-09 | |||
| JP2018131367A | 2018-08-23 |
Other References:
ZHENG, YOULIAO ET AL.: "Group-III Nitride Semiconductor Materials", CHINA STRATEGIC EMERGING INDUSTRY—NEW MATERIAL THIRD GENERATION SEMICONDUCTOR MATERIAL, 31 December 2017 (2017-12-31), XP009547834
Attorney, Agent or Firm:
HENSEN INTELLECTUAL PROPERTY FIRM (CN)
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