METHOD FOR PREPARING AVALANCHE PHOTODIODE - THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION

Title:

METHOD FOR PREPARING AVALANCHE PHOTODIODE

Document Type and Number:

WIPO Patent Application WO/2019/210647

Kind Code:

A1

Abstract:

A method for preparing an avalanche photodiode. The method comprises: preparing a mesa on a wafer (S101); growing a sacrificial layer on an upper surface of the wafer and a side surface of the mesa (S102); removing the sacrificial layer in an ohmic contact electrode region of the wafer (S103): preparing an ohmic contact electrode in the ohmic contact electrode region of the wafer from which the sacrificial layer in the ohmic contact electrode region has been removed (S104); removing the sacrificial layer in a non-mesa region of the wafer on which the ohmic contact electrode is prepared and on the side surface of the mesa, the non-mesa region being a region of the wafer outside of the mesa (S105); growing a passivation layer on the upper surface of the wafer and the side surface of the mesa from which the sacrificial layer in the non-mesa region and on the side surface of the mesa has been removed (S106); removing the passivation layer on the upper surface of the mesa of the wafer and the passivation layer in the non-mesa region of the wafer corresponding to the ohmic contact electrode region (S107); and removing the sacrificial layer on the upper surface of the mesa of the wafer (S108). The method for preparing an avalanche photodiode can protect a photosensitive surface of a device from damage, thereby reducing the leakage current and improving the quantum efficiency and responsiveness of the device.

Inventors:

ZHOU XINGYE (CN)
FENG ZHIHONG (CN)
LV YUANJIE (CN)
TAN XIN (CN)
WANG YUANGANG (CN)
SONG XUBO (CN)
LI JIA (CN)
FANG YULONG (CN)

Application Number:

PCT/CN2018/110439

Publication Date:

November 07, 2019

Filing Date:

October 16, 2018

Export Citation:

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Assignee:

THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION (CN)

International Classes:

H01L31/18; H01L31/107

Foreign References:

CN108550652A	2018-09-18
CN107170847A	2017-09-15
CN107768462A	2018-03-06
CN104882510A	2015-09-02
US6774448B1	2004-08-10

Attorney, Agent or Firm:

SHIJIAZHUANG GOWELL INTELLECTUAL PROPERTY LAW FIRM (CN)

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