Title:
METHOD FOR PREPARING METAL NITRIDE FILM WITH ADJUSTABLE METAL CONTENT AND REACTOR
Document Type and Number:
WIPO Patent Application WO/2018/133269
Kind Code:
A1
Abstract:
Disclosed are a method for preparing a metal nitride film with an adjustable metal content and a reactor, the method comprising a plurality of first half-reaction processes and a plurality of second half-reaction processes, and the metal nitride film with an adjustable metal content being prepared by controlling the ratio of the cycle times of the first half-reaction process to the cycle times of the second half-reaction process; the first half-reaction process refers to dissociating from the metal organic precursor absorbed on the surface of the substrate by using light irradiation, thus leaving a metal atom layer on the surface of the substrate; and the second half-reaction process refers to a reaction with the metal atom layer on the surface of the substrate using NH3 plasma, so as to form a metal nitride film. The method can adjust and control the ratio between the metal and nitrogen in the film, and can realize the modulation of the film resistivity; and the prepared metal nitride film has an ideal step coverage rate and accurate film thickness control ability, is especially suitable for filling trenches with a high depth-to-width ratio, and can meet the requirements of an advanced CMOS integrated circuit process.
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Inventors:
DING SHIJIN (CN)
WANG YONGPING (CN)
ZUO ANAN (CN)
ZHANG WEI (CN)
WANG YONGPING (CN)
ZUO ANAN (CN)
ZHANG WEI (CN)
Application Number:
PCT/CN2017/084859
Publication Date:
July 26, 2018
Filing Date:
May 18, 2017
Export Citation:
Assignee:
UNIV FUDAN (CN)
International Classes:
C23C16/34; C23C16/455; H01L21/28; H01L21/02
Foreign References:
| CN104205302A | 2014-12-10 | |||
| US20080038484A1 | 2008-02-14 | |||
| US7300870B2 | 2007-11-27 |
Attorney, Agent or Firm:
SUNSHINEIP INTELLECTUAL PROPERTY LAW FIRM (CN)
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