Title:
METHOD FOR PREPARING NANOWIRES OF PHASE CHANGE MATERIALS
Document Type and Number:
WIPO Patent Application WO/2010/080002
Kind Code:
A2
Abstract:
The present invention provides a method for preparing Sb2Te3 single crystalnanowires. The method comprises the steps of: (a) providing a substrate; (b) laminating a Ge-Sb-Te phase change material and doping a crystallization-inducing material on the substrate through sputtering without use of catalyst materials, in order to form a thin film comprising the Ge-Sb-Te phase change material doped with the crystallization inducing material on the substrate; and (c) preferentially bonding the crystallization inducing material with Ge by annealing the substrate on which the thin film is formed inside a reactor, then performing phase separation through the formation of a phase change material Sb2Te3 by bonding an excess of Sb and Te, in order to grow the single crystalnanowires consisting of Sb2Te3 on the thin film.
Inventors:
LEE HONG LIM (KR)
KIM BYUNG KEUN (KR)
KIM BYUNG KEUN (KR)
Application Number:
PCT/KR2010/000150
Publication Date:
July 15, 2010
Filing Date:
January 11, 2010
Export Citation:
Assignee:
IND ACADEMIC COOP (KR)
LEE HONG LIM (KR)
KIM BYUNG KEUN (KR)
LEE HONG LIM (KR)
KIM BYUNG KEUN (KR)
International Classes:
H01L21/8247
Foreign References:
| KR100751527B1 | 2007-08-16 | |||
| KR20070064554A | 2007-06-21 | |||
| KR100188703B1 | 1999-06-01 | |||
| KR960013215B1 | 1996-10-02 |
Attorney, Agent or Firm:
LEE, Chae Hyung et al. (KR)
이채형 (KR)
이채형 (KR)
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