Title:
METHOD FOR PREPARING PHOTOELECTRIC ARTIFICIAL SYNAPSE AND PHOTOELECTRIC ARTIFICIAL SYNAPSE
Document Type and Number:
WIPO Patent Application WO/2022/222308
Kind Code:
A1
Abstract:
Provided in the present invention is a method for preparing a photoelectric artificial synapse, comprising the following steps: providing a substrate; manufacturing on the substrate a pattern electrode having a channel function region; manufacturing on the surface of the substrate an organic semiconductor light response function layer covering the pattern electrode; preparing on the surface of the light response function layer a ferroelectric polarisation regulation layer; and, after annealing, obtaining an artificial synapse. The implementation of the artificial synapse of the present invention is based on multi-level regulation of ferroelectric polarisation and the photoelectric response of organic photoelectric semiconductors. A drip-coating method is used for obtaining a high-quality in-plane polarised ferroelectric thin film to construct a planar multi-layer structure. Compared with other memristor artificial synapses that rely on conductive filaments and ion doping, the present invention has the advantages of a low operating voltage, good retention characteristics, and a simple and controllable preparation process. The present invention can simulate important synapse functions, has a fast response to light stimulation and low energy consumption, and can be used in fields such as neuromorphic computing, image recognition, machine vision, and convolutional neural networks.
Inventors:
HU LAIGUI (CN)
CAI YICHEN (CN)
ZHAN YIQIANG (CN)
QIN YAJIE (CN)
CAI YICHEN (CN)
ZHAN YIQIANG (CN)
QIN YAJIE (CN)
Application Number:
PCT/CN2021/111179
Publication Date:
October 27, 2022
Filing Date:
August 06, 2021
Export Citation:
Assignee:
GUANGHUA LINGANG ENGINEERING APPLICATION AND TECH R&D SHANGHAI CO LTD (CN)
International Classes:
G06N3/04; H01L51/48; H01L51/42; H01L51/44
Foreign References:
| CN113161494A | 2021-07-23 | |||
| CN112397392A | 2021-02-23 | |||
| CN112436092A | 2021-03-02 | |||
| CN112687792A | 2021-04-20 | |||
| CN112542515A | 2021-03-23 | |||
| US20200028074A1 | 2020-01-23 |
Attorney, Agent or Firm:
SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY (CN)
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