Title:
METHOD FOR PREPARING SEMICONDUCTOR STRUCTURE, AND SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2023/015586
Kind Code:
A1
Abstract:
The present disclosure relates to the technical field of semiconductors. Provided are a method for preparing a semiconductor structure, and a semiconductor structure. The method for preparing a semiconductor structure comprises: providing a substrate; forming, on the substrate, active pillars, which are arranged in an array, wherein the shapes of projections of the active pillars on a longitudinal section comprise a cross shape; forming a first oxide layer on the substrate, wherein a filling region is formed between adjacent active pillars in the same row; sequentially forming a word line and a dielectric layer in the filling region; exposing top surfaces of the active pillars; forming a contact layer on the active pillars; and forming a capacitor structure on the contact layer.
Inventors:
WANG XIAOLING (CN)
HUNG HAIHAN (CN)
HUNG HAIHAN (CN)
Application Number:
PCT/CN2021/113310
Publication Date:
February 16, 2023
Filing Date:
August 18, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L27/108
Foreign References:
| CN110957319A | 2020-04-03 | |||
| CN112164701A | 2021-01-01 | |||
| CN103474464A | 2013-12-25 | |||
| CN101783348A | 2010-07-21 | |||
| US20070111455A1 | 2007-05-17 |
Attorney, Agent or Firm:
BOXIN CHINA INTELLECTUAL PROPERTY (CN)
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