Title:
METHOD FOR PRESERVING A GALLIUM NITRIDE SUBSTRATE, PRESERVED GALLIUM NITRIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2011/040106
Kind Code:
A1
Abstract:
Provided is a method for preserving a gallium nitride substrate (1) that has a principal surface with a plane orientation other than (0001) or (000-1) and can be used to manufacture a semiconductor device having good characteristics. Said gallium nitride substrate has a flat first principal surface (1m), and the plane orientation at an arbitrary point P on the first principal surface (1m), said point P being at least 3 mm away from the outer edge of the first principal surface, is tilted at an angle Δα, between −10° and 10°, with respect to the plane orientation of an arbitrary crystal plane (1a) tilted at an angle between 50° and 90° with respect to either a (0001) surface or a (000-1) surface (1c) at point P. In the provided method, the aforementioned gallium nitride substrate is preserved in an atmosphere having an oxygen concentration of no more than 15% by volume and a water vapor concentration of no more than 20 g/m³.
Inventors:
NAKAHATA SEIJI (JP)
Application Number:
PCT/JP2010/061811
Publication Date:
April 07, 2011
Filing Date:
July 13, 2010
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
NAKAHATA SEIJI (JP)
NAKAHATA SEIJI (JP)
International Classes:
C30B29/38; C23C16/34; H01L21/205; H01L33/32
Foreign References:
| JP2007335583A | 2007-12-27 | |||
| JP2008285364A | 2008-11-27 | |||
| JP2006315947A | 2006-11-24 | |||
| JP2005029233A | 2005-02-03 | |||
| JPH02204400A | 1990-08-14 |
Other References:
ENYA Y. ET AL: "531nm green lasing of InGaN based laser diodes on semi-polar {20-21} free- standing GaN substrates", APPL. PHYS. EXP., vol. 2, 17 July 2009 (2009-07-17), pages 082101-1 - 082101-3, XP001552526
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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