METHOD FOR PROCESSING LARGE-SIZE ULTRA-THIN HIGH-PRECISION LITHIUM NIOBATE WAFER

WIPO Patent Application WO/2022/121012

A1

The present invention relates to the technical field of semiconductor material processing, and in particular to a method for processing a large-size ultra-thin high-precision lithium niobate wafer. The method comprises the steps of slicing, chamfering, grinding 800, blackening, grinding 2000 and polishing; a double-sided grinder is used in the steps of grinding 800 and grinding 2000, and a grinding pressurization mode uses a slow segmented pressurization mode at 22±2°C; a double-sided polisher is used in the step of polishing, the maximum rotational speed of a device is 6-10 rpm at 22±2°C, a SiO22 polishing solution is used, the specific gravity is 1.06-1.20, and a polishing pressurization mode uses a slow segmented pressurization mode. Since a slow and gradual pressurization mode is used during pressurization, the conditions such as scratching, fragmentation, and cracking are greatly reduced, and moreover, the conditions such as edge collapse, edge explosion, and insufficient grinding can be effectively reduced in conjunction with a fixture of the present invention, thereby greatly increasing the yield of production, and getting rid of the restriction of manufacturer semiconductor machine devices on products.

SHEN HAO (CN)
ZHANG YI (CN)
XU QIUFENG (CN)
WANG WANDUN (CN)
DING SUNJIE (CN)
SONG YANYAN (CN)
ZHU HAIYING (CN)
CAO HUAN (CN)

PCT/CN2020/140167

June 16, 2022

December 28, 2020

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TDG HOLDING CO LTD (CN)

B24B41/06; B24B1/00

CN110744364A	2020-02-04
CN107665813A	2018-02-06
CN103921205A	2014-07-16
CN103978406A	2014-08-13
CN107378654A	2017-11-24
US3860467A	1975-01-14

CHANGZHOU BAIYETENGFEI PATENT AGENCY (GENERAL PARTNERSHIP) (CN)

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