Title:
METHOD FOR PROCESSING OBJECT TO BE PROCESSED
Document Type and Number:
WIPO Patent Application WO/2017/204159
Kind Code:
A1
Abstract:
In a method MT according to one embodiment, before etching a layer to be processed J1 of a wafer W to be processed, a main surface J11 of the layer to be processed J1 is divided into a plurality of areas ER, then, in a step SB2, the difference value between the groove width of a mask J2 provided on the layer to be processed J1 and a reference value for said groove width is calculated for each of the plurality of areas ER, in a step SB6, correspondence data DT indicating correspondences between the temperature of the layer to be processed J1 and the thickness of a formed film is used to adjust the temperature of the layer to be processed J1 so as to attain the necessary temperature for forming a film having a thickness corresponding to the difference values in each of the areas ER, and then a film formation process similar to the ALD method is used to form a film on the mask J2 in each atomic layer, and a film J3 having a thickness corresponding to the difference value is formed on the mask J2 so as to correct the groove widths in each of the areas ER to the reference values.
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Inventors:
KIHARA YOSHIHIDE (JP)
HISAMATSU TORU (JP)
HONDA MASANOBU (JP)
HISAMATSU TORU (JP)
HONDA MASANOBU (JP)
Application Number:
PCT/JP2017/019024
Publication Date:
November 30, 2017
Filing Date:
May 22, 2017
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; H01L21/31; H01L21/316
Foreign References:
| JP2016076621A | 2016-05-12 | |||
| JP2009016815A | 2009-01-22 | |||
| JP2016072596A | 2016-05-09 | |||
| JP2016001645A | 2016-01-07 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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