Title:
METHOD FOR PROCESSING SEMICONDUCTOR CONTAINING TRANSITION METAL, METHOD FOR PRODUCING SEMICONDUCTOR CONTAINING TRANSITION METAL, AND PROCESSING LIQUID FOR SEMICONDUCTORS
Document Type and Number:
WIPO Patent Application WO/2022/138561
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing a method for producing a semiconductor that has a flat surface, while containing a transition metal by suppressing decrease in the flatness (surface roughening) caused by anisotropic etching wherein etching rates are different among crystal planes of the transition metal when a transition metal film having a surface from which crystal planes of various orientations are exposed is etched. According to the present invention, the above-described problem is solved by any one of the following means. A method for processing a semiconductor containing a transition metal, said method comprising a step wherein etching of a transition metal is carried out in such a manner that the etching amount ratio of one crystal plane of the transition metal to another crystal plane is from 0.1 to 10. A method for processing a semiconductor containing a transition metal, said method comprising a step wherein etching of a transition metal is carried out and a step wherein the etching amount ratio of the transition metal is measured. A processing liquid for semiconductors, said processing liquid containing an amphoteric surfactant or an amine, wherein the amphoteric surfactant is a betaine, an imidazoline, glycine or an amine oxide.
Inventors:
KIKKAWA YUKI (JP)
SATO TOMOAKI (JP)
SAITO KOHEI (JP)
YARIMIZU HIROTO (JP)
NEGISHI TAKAYUKI (JP)
SATO TOMOAKI (JP)
SAITO KOHEI (JP)
YARIMIZU HIROTO (JP)
NEGISHI TAKAYUKI (JP)
Application Number:
PCT/JP2021/047028
Publication Date:
June 30, 2022
Filing Date:
December 20, 2021
Export Citation:
Assignee:
TOKUYAMA CORP (JP)
International Classes:
H01L21/306; H01L21/308
Domestic Patent References:
| WO2020166676A1 | 2020-08-20 | |||
| WO2011074601A1 | 2011-06-23 | |||
| WO2020102655A1 | 2020-05-22 |
Foreign References:
| JPH08213376A | 1996-08-20 | |||
| JP2020097765A | 2020-06-25 | |||
| JP2019507829A | 2019-03-22 |
Attorney, Agent or Firm:
IP FIRM SHUWA (JP)
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