Title:
METHOD FOR PROCESSING SUBSTRATE, PROCESSING DEVICE, AND PROCESSING SYSTEM
Document Type and Number:
WIPO Patent Application WO/2020/027152
Kind Code:
A1
Abstract:
Provided in one exemplary embodiment of the present invention is a method for processing a substrate. The substrate is provided with an etching layer and a mask. The mask is disposed on a first surface of the etching layer. This method includes a first step, a second step, and a third step. The first step is for forming a first film on a second surface of the mask. The second step is for forming, on the first film, a second film having a material of the etching layer by etching the first surface of the etching layer. The third step is for removing the first film and the second film by exposing the substrate after the second step to plasma of a processing gas. The first film has an electrode material. The processing gas contains oxygen.
Inventors:
KUBO TAKUYA (JP)
KANG SONG YUN (JP)
KANG SONG YUN (JP)
Application Number:
PCT/JP2019/029885
Publication Date:
February 06, 2020
Filing Date:
July 30, 2019
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; H01L43/12
Foreign References:
| JP2010165980A | 2010-07-29 | |||
| JPH07263420A | 1995-10-13 | |||
| JP2005268252A | 2005-09-29 | |||
| JP2012119564A | 2012-06-21 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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