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Title:
METHOD FOR PRODUCING ARTIFICIAL MINERAL, AND ARTIFICIAL MINERAL
Document Type and Number:
WIPO Patent Application WO/2022/196656
Kind Code:
A1
Abstract:
The present invention is a method for producing an artificial mineral by crystallizing an amorphous precursor gel containing one or more metallic elements by carrying out a synthesis reaction in which the amorphous precursor gel is heated and pressurized under prescribed conditions. The amorphous precursor gel is frozen and dried prior to the synthesis reaction. By freezing the amorphous precursor gel, an aggregated state of units in the amorphous precursor gel is fixed, and it is therefore possible to obtain an artificial mineral having a prescribed crystal structure when this amorphous precursor gel is dried and crystallized.

Inventors:
MIZUSAWA ATSUSHI (JP)
Application Number:
PCT/JP2022/011440
Publication Date:
September 22, 2022
Filing Date:
March 14, 2022
Export Citation:
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Assignee:
AC BIODE LTD (JP)
International Classes:
C01B39/48; B01J29/70
Domestic Patent References:
WO2021115499A12021-06-17
WO2004040635A12004-05-13
Foreign References:
JP2020528862A2020-10-01
CN106629770A2017-05-10
JP2013129590A2013-07-04
Other References:
ATSUSHI MIZUSAWA: "XAFS Investigations of Hydrothermal Processes", THE GRADUATE UNIVERSITY FOR ADVANCED STUDIES, DISSERTATION, 2004
CHIL-HUNG CHENGDANIEL F. SCHANTZ: "29Si NMR Studies of Zeolite Precursor Solutions", J.PHYS.CHEM.B, vol. 110, 2006, pages 313 - 318
P. P. E. A. D. MOOR ET AL.: "Imaging the Assembly Process of the Organic-Mediated Synthesis of a Zeolite", CHEM. EUR. J, vol. 5, no. 7, 1999, pages 2083
"Development of SAPO-based Zeolite Catalyst using Organosilane as a Si Source", MANUSCRIPTS OF THE ANNUAL MEETING OF THE SOCIETY OF CHEMICAL ENGINEERS, 13 March 2016 (2016-03-13)
"Defect engineering to boost catalytic activity of Beta zeolite on low-density polyethylene cracking", MATERIALS TODAY SUSTAINABILITY, 27 December 2021 (2021-12-27), pages 100098
See also references of EP 4197972A4
Attorney, Agent or Firm:
KYOTO INTERNATIONAL PATENT LAW OFFICE (JP)
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