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Title:
METHOD FOR PRODUCING COPPER-CONTAINING LAYER
Document Type and Number:
WIPO Patent Application WO/2021/117540
Kind Code:
A1
Abstract:
A method for producing a copper-containing layer, comprising: step 1 of reducing a surface of a substrate (excluding a substrate having a surface comprising of a silicic acid compound) with a reducing agent; and step 2 of forming a copper-containing layer on the surface that has been reduced in step 1 by a plasma atomic layer deposition method using a thin-film-forming raw material containing a copper compound.

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Inventors:
NISHIDA AKIHIRO (JP)
YAMASHITA ATSUSHI (JP)
Application Number:
PCT/JP2020/044618
Publication Date:
June 17, 2021
Filing Date:
December 01, 2020
Export Citation:
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Assignee:
ADEKA CORP (JP)
International Classes:
C23C16/18; C23C28/02
Foreign References:
JP2012532993A2012-12-20
US20130330473A12013-12-12
JP2007502551A2007-02-08
JP2015218117A2015-12-07
Other References:
"Trends in Copper Precursor Development for CVD and ALD Applications", ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, vol. 4, no. 1, 2015, pages N3188 - N3197
See also references of EP 4074860A4
Attorney, Agent or Firm:
SOGA, Michiharu et al. (JP)
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