Title:
METHOD FOR PRODUCING CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2016/121577
Kind Code:
A1
Abstract:
Disclosed method for producing a crystal is a method for producing a crystal of silicon carbide, which comprises a preparation step, a contact step, a first growth step, a temperature raising step, a temperature lowering step and a second growth step. The preparation step comprises a step for preparing a seed crystal, a crucible and a solution. The contact step comprises a step for bringing the seed crystal into contact with the solution. The first growth step comprises a step for growing a crystal on the lower surface of the seed crystal by raising the temperature of the solution to a first temperature range and pulling the seed crystal, while maintaining the temperature of the solution within the first temperature range. The temperature raising step comprises a step for raising the temperature of the solution. The temperature lowering step comprises a step for lowering the temperature of the solution. The second growth step comprises a step for further growing the crystal, while maintaining the temperature of the solution within the first temperature range.
Inventors:
DOMOTO CHIAKI (JP)
MASAKI KATSUAKI (JP)
KUBA YUTAKA (JP)
MASAKI KATSUAKI (JP)
KUBA YUTAKA (JP)
Application Number:
PCT/JP2016/051449
Publication Date:
August 04, 2016
Filing Date:
January 19, 2016
Export Citation:
Assignee:
KYOCERA CORP (JP)
International Classes:
C30B29/36; C30B15/20
Foreign References:
| JPS60260498A | 1985-12-23 | |||
| JP2013075771A | 2013-04-25 |
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