Title:
METHOD FOR PRODUCING CRYSTALLINE INDIUM OXIDE SEMICONDUCTOR FILM, THIN-FILM TRANSISTOR AND SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2023/214513
Kind Code:
A1
Abstract:
This method for producing a crystalline indium oxide semiconductor film has: a step for forming an indium oxide film via sputtering film deposition by sputtering a sputtering target with metal indium being a principal component thereof in a mixed gas atmosphere comprising oxygen and water and/or hydrogen; and a step for obtaining a crystalline indium oxide semiconductor film by heating the indium oxide film.
Inventors:
INOUE KAZUYOSHI (JP)
ITOSE MAMI (JP)
IWASE NOBUHIRO (JP)
ITOSE MAMI (JP)
IWASE NOBUHIRO (JP)
Application Number:
PCT/JP2023/015848
Publication Date:
November 09, 2023
Filing Date:
April 21, 2023
Export Citation:
Assignee:
IDEMITSU KOSAN CO (JP)
International Classes:
C23C14/08; C23C14/34; H01L21/336; H01L21/363; H01L29/786
Foreign References:
| JPH0364450A | 1991-03-19 | |||
| JP2014027286A | 2014-02-06 | |||
| JPS62211378A | 1987-09-17 | |||
| JP2016129241A | 2016-07-14 | |||
| JP2020090724A | 2020-06-11 |
Attorney, Agent or Firm:
HEIWA INTERNATIONAL PATENT OFFICE (JP)
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