Title:
METHOD FOR PRODUCING AND METHOD FOR DESIGNING SOI WAFER
Document Type and Number:
WIPO Patent Application WO/2011/108188
Kind Code:
A1
Abstract:
The disclosed method for producing an SOI wafer, wherein an SOI layer is formed on a buried insulator layer and that is suitable for photolithography conducted using exposure light of wavelength λ, is characterized by having at least a step for designing the thickness of the buried insulator layer of the aforementioned SOI wafer in accordance with the wavelength (λ) of exposure light used in the aforementioned photolithography performed on the SOI wafer after production, and a step for fabricating the SOI wafer wherein an SOI layer is formed on the buried insulator layer of the aforementioned designed thickness. As a result, a method for producing and a method for designing an SOI waver are provided that, when performing photolithography, can restrain fluctuations in reflectance of exposure light that accompany fluctuations in SOI-layer thickness and can suppress fluctuations in the state of resist photosensitivity.
Inventors:
KUWABARA SUSUMU (JP)
Application Number:
PCT/JP2011/000598
Publication Date:
September 09, 2011
Filing Date:
February 03, 2011
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
KUWABARA SUSUMU (JP)
KUWABARA SUSUMU (JP)
International Classes:
H01L27/12
Domestic Patent References:
| WO2006085626A1 | 2006-08-17 |
Foreign References:
| JP2007521660A | 2007-08-02 | |||
| JP2002343842A | 2002-11-29 | |||
| JP2000195791A | 2000-07-14 | |||
| JPH05275665A | 1993-10-22 | |||
| JP2006080461A | 2006-03-23 |
Other References:
See also references of EP 2544235A4
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (JP)
Good Miya Mikio (JP)
Good Miya Mikio (JP)
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