Title:
METHOD FOR PRODUCING GAN SEMICONDUCTOR
Document Type and Number:
WIPO Patent Application WO/2011/114999
Kind Code:
A1
Abstract:
Provided is a method for producing a GaN semiconductor, in which a layer comprising a GaN semiconductor is formed on a substrate, using ammonia as a raw material. Said method uses ammonia in the gas phase section of a filling container filled with liquefied ammonia, in such a manner that a portion changes into a liquid phase. Liquefied ammonia within the filling container is continuously or intermittently circulated from the liquid phase section at one end to the gas phase section or the liquid phase section at the other end through a pipe, one end of which communicates with the liquid phase section within the filling container, and the other end of which communicates with the gas phase section or the liquid phase section within the filling container; after evaporating at least a portion of the liquefied ammonia by heating during circulation, ammonia in the gas phase section is supplied according to a method that includes a step in which the ammonia is returned to the gas phase section or the liquid phase section at the other end; and the ammonia directly extracted from the filling container in a gaseous state is introduced in a gaseous state to a reaction chamber in which a substrate is held.
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Inventors:
HOSHINO YASUYUKI (JP)
ARAI TATSUHARU (JP)
ARAI TATSUHARU (JP)
Application Number:
PCT/JP2011/055722
Publication Date:
September 22, 2011
Filing Date:
March 11, 2011
Export Citation:
Assignee:
SHOWA DENKO KK (JP)
HOSHINO YASUYUKI (JP)
ARAI TATSUHARU (JP)
HOSHINO YASUYUKI (JP)
ARAI TATSUHARU (JP)
International Classes:
H01L21/205; C23C16/34; C23C16/448; F17C7/04; F17C13/00
Foreign References:
| JP2000091235A | 2000-03-31 | |||
| JP2000120993A | 2000-04-28 | |||
| US20090288426A1 | 2009-11-26 |
Attorney, Agent or Firm:
SHIGA Masatake et al. (JP)
Masatake Shiga (JP)
Masatake Shiga (JP)
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Claims: