METHOD FOR PRODUCING GROUND WAFER AND METHOD FOR PRODUCING WAFER

WIPO Patent Application WO/2023/228787

A1

The present invention provides a method for producing a ground wafer, wherein a ground wafer is produced by grinding a starting material wafer that has a first main surface and a second main surface, the method comprising: a first resin bonding step in which a resin is bonded to the first main surface of the starting material wafer, thereby forming a first resin layer on the first main surface; a step in which the second main surface, on which the first resin layer is not present, is subjected to one-side grinding; a first resin layer removal step in which the first resin layer is removed; a step in which the first main surface is subjected to one-side grinding; a second resin bonding step in which a resin is bonded to the second main surface, thereby forming a second resin layer on the second main surface; a step in which the first main surface, on which the second resin layer is not present, is subjected to one-side grinding; a second resin layer removal step in which the second resin layer is removed; and a step in which the second main surface is subjected to one-side grinding. Consequently, the present invention provides: a method for producing a ground wafer for the purpose of improving nanotopography and warp level at the same time; and a method for producing a wafer, the method enabling the production of a wafer that has excellent quality such as excellent flatness.

TAGA RYO (JP)

PCT/JP2023/017977

November 30, 2023

May 12, 2023

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SHINETSU HANDOTAI KK (JP)

B24B41/06; B24B7/22; H01L21/304

WO2019163017A1

2019-08-29

JP2015008247A	2015-01-15
JPH10180599A	1998-07-07
JPH0866850A	1996-03-12

YOSHIMIYA Mikio et al. (JP)

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