METHOD FOR PRODUCING LITHIUM NIOBATE SINGLE CRYSTAL SUBSTRATE

Title:

METHOD FOR PRODUCING LITHIUM NIOBATE SINGLE CRYSTAL SUBSTRATE

Document Type and Number:

WIPO Patent Application WO/2017/068810

Kind Code:

A1

Abstract:

[Problem] To provide a method for producing a lithium niobate (LN) substrate having a small in-plane distribution of volume resistance values, as well as little variation in volume resistivity between substrates processed from the same ingot, by easy management of treatment conditions pertaining to temperature and time. [Solution] A method for producing an LN substrate using an LN single crystal grown by the Czochralski method, wherein a lithium niobate single crystal in the form of an ingot having an Fe concentration in the single crystal of 50-2,000 mass ppm is embedded in Al powder or a mixed powder of Al and Al2O3, heat treatment is conducted at a temperature of 450°C or higher and less than the melting point of aluminum of 660°C, and a lithium niobate single crystal substrate having volume resistivity controlled to within the range of 1×108Ω⋅cm to 2×1012Ω⋅cm is produced.

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Inventors:

KAJIGAYA TOMIO (JP)

Application Number:

PCT/JP2016/067070

Publication Date:

April 27, 2017

Filing Date:

June 08, 2016

Export Citation:

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Assignee:

SUMITOMO METAL MINING CO (JP)

International Classes:

C30B29/30; C30B33/02; H01L41/187; H01L41/41

Foreign References:

JP2005179177A	2005-07-07
JP2005314137A	2005-11-10

Other References: