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Title:
METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR PHOTOCATALYST THIN FILM
Document Type and Number:
WIPO Patent Application WO/2021/240591
Kind Code:
A1
Abstract:
A method for producing a nitride semiconductor photocatalyst thin film 1 that causes an oxidation-reduction reaction by exerting a catalytic function upon irradiation of light, wherein: an n-type gallium nitride layer 12 is formed on the surface of an insulating or conductive substrate 11; an indium gallium nitride layer 13 is formed in the surface of the n-type gallium nitride layer 12; a metal layer 14 is formed in a part of the surface of the indium gallium nitride layer 13; a heat treatment is carried out so as to form an ohmic junction at the interface between the indium gallium nitride layer 13 and the metal layer 14; a p-type metal oxide 15 is formed in a part of the surface of the indium gallium nitride layer 13; and the p-type metal oxide 15 is subjected to a heat treatment.

Inventors:
UZUMAKI YUYA (JP)
SATO SAYUMI (JP)
ONO YOKO (JP)
KOMATSU TAKESHI (JP)
Application Number:
PCT/JP2020/020511
Publication Date:
December 02, 2021
Filing Date:
May 25, 2020
Export Citation:
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Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
B01J35/02; C23C14/06; C23C16/34; C30B29/38
Foreign References:
JP2019099884A2019-06-24
JP2016043304A2016-04-04
JP2017121598A2017-07-13
JP2017121597A2017-07-13
JP2015147190A2015-08-20
Other References:
HAYASHI, T. ET AL.: "High Stability and Efficiency of GaN Photocatalyst for Hydrogen Generation from Water", JPN. J. APPL. PHYS., vol. 51, 9 October 2012 (2012-10-09), pages 112601 - 1 -112601-3, XP055877205, DOI: 10.1143/JJAP.51.112601
KUMAKURA, KAZUHIDE ET AL.: "Stability of NiO/InGaN/n-GaN photoanodes during solar water splitting", PROCEEDINGS OF THE 80TH JSAP SPRING MEETING, vol. 80, 4 September 2019 (2019-09-04)
Attorney, Agent or Firm:
MIYOSHI Hidekazu et al. (JP)
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