Title:
METHOD FOR PRODUCING NITRIDE SINGLE CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2013/147097
Kind Code:
A1
Abstract:
The first purpose of the present invention is to provide a method for efficiently growing a nitride single crystal even under low-pressure conditions. The present invention relates to a method for producing a nitride single crystal, the method comprising a step for controlling the pressure inside a reactor holding a seed crystal that has a hexagonal crystal structure, a nitrogen-containing solvent, a mineralizer that contains fluorine atoms, and a raw material so that the pressure reaches 5-200 MPa and the solvent reaches a supercritical state and/or subcritical state, and growing a nitride single crystal on the surface of the seed crystal.
Inventors:
ISHIGURO TORU
BAO QUANXI
YOKOYAMA CHIAKI
TOMIDA DAISUKE
CHICHIBU SHIGEFUSA
KAYANO RINZO
UEDA MUTSUO
SAITO MAKOTO
KAGAMITANI YUJI
BAO QUANXI
YOKOYAMA CHIAKI
TOMIDA DAISUKE
CHICHIBU SHIGEFUSA
KAYANO RINZO
UEDA MUTSUO
SAITO MAKOTO
KAGAMITANI YUJI
Application Number:
PCT/JP2013/059406
Publication Date:
October 03, 2013
Filing Date:
March 28, 2013
Export Citation:
Assignee:
MITSUBISHI CHEM CORP (JP)
UNIV TOHOKU (JP)
JAPAN STEEL WORKS LTD (JP)
UNIV TOHOKU (JP)
JAPAN STEEL WORKS LTD (JP)
International Classes:
C30B29/38; C30B7/10
Foreign References:
| JP2007509507A | 2007-04-12 | |||
| JP2008120672A | 2008-05-29 | |||
| JP2010515654A | 2010-05-13 |
Attorney, Agent or Firm:
HAMADA Yuriko et al. (JP)
Yuriko Hamada (JP)
Yuriko Hamada (JP)
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