METHOD OF PRODUCING SEMICONDUCTOR DEVICE AND PROCESSING CONDITIONS SETTING DEVICE

WIPO Patent Application WO/2002/035587

A1

A method of producing a semiconductor device capable of setting various processing conditions such as a polishing time in a CPM process that are always optimum for wafers in a product lot even when an error occurs with a film thickness or the like in the preceding CVD process. Processing conditions in a CMP process set based on a film thickness obtained in the preceding CVD film-forming process can optimize the setting of processing conditions in a CMP process including an error occurred with a film thickness in the CVD film-forming process. More specifically, a processing condition computing unit (5) calculates an actual polishing amount in the current lot based on a CVD film thickness and a target value, and performs computing based on that calculated data and data on a retrieved polishing rate or a retrieved updated target value to calculate a polishing time.

HIRAI TOSHIYA (JP)
YOKOO NOBORU (JP)
MAKITA MASAHIRO (JP)
HAYAKAWA HIDEAKI (JP)
YAMAMICHI YASUAKI (JP)
SAKAMOTO AKIHISA (JP)

PCT/JP2001/009269

May 02, 2002

October 23, 2001

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SONY CORP (JP)
HIRAI TOSHIYA (JP)
YOKOO NOBORU (JP)
MAKITA MASAHIRO (JP)
HAYAKAWA HIDEAKI (JP)
YAMAMICHI YASUAKI (JP)
SAKAMOTO AKIHISA (JP)

B24B53/007; H01L21/306; H01L21/02; H01L21/304; H01L21/3105; H01L21/768; (IPC1-7): H01L21/02

JP2000182917A	2000-06-30
JPH11219874A	1999-08-10
JP2000252179A	2000-09-14
JPH11267952A	1999-10-05
JPH11260683A	1999-09-24
JPH11186204A	1999-07-09
JPH10280174A	1998-10-20
JPH0513291A	1993-01-22

Fujishima, Youichiro (Shinku 1-chome Shinjuku-ku, Tokyo, JP)

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