Title:
METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND COMPOSITION FOR PRODUCING SEMICONDUCTOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2020/171054
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide: a method for producing a semiconductor substrate, which is capable of forming a silicon-containing film that exhibits excellent embeddability, flatness and heat resistance; and a composition. The present invention is a method for producing a semiconductor substrate, which comprises a step wherein a composition that contains a solvent and a compound having a first structural unit represented by formula (1) is directly applied to the pattern side of a substrate on which a pattern has been formed. In formula (1), R1 represents an aromatic carbon ring or a divalent organic group that contains an aromatic heterocyclic ring and has 3-20 carbon atoms; and each of X1 and Y1 independently represents a hydrogen atom, a hydroxy group, a halogen atom or a monovalent organic group having 1-20 carbon atoms. It is preferable that this method for producing a semiconductor substrate additionally comprises a step wherein at least a part of the silicon-containing film formed in the above-described application step is etched after the application step.
More Like This:
Inventors:
KASAI TATSUYA (JP)
SEKO TOMOAKI (JP)
TAJI TOMOYA (JP)
SAKAI TATSUYA (JP)
SEKO TOMOAKI (JP)
TAJI TOMOYA (JP)
SAKAI TATSUYA (JP)
Application Number:
PCT/JP2020/006229
Publication Date:
August 27, 2020
Filing Date:
February 18, 2020
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
H01L21/312; C08G77/48; G03F7/11
Domestic Patent References:
| WO2018230671A1 | 2018-12-20 |
Foreign References:
| JPH09289205A | 1997-11-04 | |||
| JPH06122768A | 1994-05-06 | |||
| JP2006002125A | 2006-01-05 | |||
| JP2005175060A | 2005-06-30 | |||
| JPH05105759A | 1993-04-27 |
Attorney, Agent or Firm:
AMANO Kazunori (JP)
Download PDF: