Title:
METHOD FOR PRODUCING SEMICONDUCTOR
Document Type and Number:
WIPO Patent Application WO/2021/192210
Kind Code:
A1
Abstract:
For the purpose of providing a method for producing a semiconductor with high yield, a film to be processed, which contains a transition metal, while being in the upper surface of a semiconductor wafer that is arranged in a processing chamber within a vessel, is etched by supplying a gas into the processing chamber, said gas being to form a complex of the transition metal. According to the present invention, the film to be processed is etched by performing: a first step wherein the temperature of the wafer is increased after supplying the complexing gas and causing the gas to adsorb onto the film, thereby forming an organic metal complex on the film surface and desorbing the organic metal complex by vaporization; and a second step wherein the complexing gas is supplied and caused to adsorb onto the film surface at a low temperature, and after subsequently stopping the supply of the gas, the temperature of the wafer is increased in stages, thereby vaporizing and desorbing an organic metal complex that has been formed on the film surface.
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Inventors:
YAMAGUCHI YOSHIHIDE (JP)
FUJISAKI SUMIKO (JP)
FUJISAKI SUMIKO (JP)
Application Number:
PCT/JP2020/013952
Publication Date:
September 30, 2021
Filing Date:
March 27, 2020
Export Citation:
Assignee:
HITACHI HIGH TECH CORP (JP)
International Classes:
H01L21/3065
Foreign References:
| JP2018186149A | 2018-11-22 | |||
| JP2019083265A | 2019-05-30 | |||
| JP2017059824A | 2017-03-23 | |||
| JP2008078618A | 2008-04-03 | |||
| JP2004091829A | 2004-03-25 |
Attorney, Agent or Firm:
TODA Yuji (JP)
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