Title:
METHOD FOR PRODUCING SILICON NANOPARTICLES CONTAINING P-TYPE OR N-TYPE IMPURITIES, METHOD FOR MANUFACTURING SOLAR CELL ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/155519
Kind Code:
A1
Abstract:
[Problem] To provide a method for producing silicon nanoparticles containing p-type or n-type impurities, in which a top-down method by a liquid phase method which is suitable for mass production is employed, and whereby the effective doping of p-type or n-type impurity atoms into the inside of silicon can be achieved. [Solution] A method for producing silicon particles is employed, which involves the following three particle refining steps: a first addition step of adding hydrofluoric acid to an aqueous solvent containing a silicon powder; a second addition step of adding an oxidizing agent having an activity to oxidize the surfaces of the silicon particles to the solvent; and an etching step of carrying out etching while applying an external force to the mixture. In the case where the impurities to be doped are of p-type, the silicon particles may be doped with the impurities prior to the above-mentioned three particle refining steps. In the case where the impurities to be doped are of n-type, the silicon particles may be doped with the impurities after the above-mentioned three particle refining steps.
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Inventors:
SATO KEISUKE (JP)
HIRAKURI KENJI (JP)
IGUCHI TSUBASA (JP)
KATO KEITA (JP)
SUGANO YUKI (JP)
HIRAKURI KENJI (JP)
IGUCHI TSUBASA (JP)
KATO KEITA (JP)
SUGANO YUKI (JP)
Application Number:
PCT/JP2018/006325
Publication Date:
August 30, 2018
Filing Date:
February 21, 2018
Export Citation:
Assignee:
UNIV TOKYO DENKI (JP)
International Classes:
C01B33/02; H01L31/0352
Foreign References:
| JP2014172766A | 2014-09-22 | |||
| JP2014193792A | 2014-10-09 | |||
| JP2007022859A | 2007-02-01 |
Attorney, Agent or Firm:
MAEDA Shinya (JP)
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