Title:
METHOD FOR PRODUCING SILICON WAFER
Document Type and Number:
WIPO Patent Application WO/2022/244421
Kind Code:
A1
Abstract:
The present invention relates to a method for producing a silicon wafer in which a silicon ingot is cut using a wire saw or a band saw to produce a main surface A and a main surface B, the method having a first cutting step for performing cutting to create the main surface A and a second cutting step for performing cutting to create the main surface B, the conditions in the first cutting step and the conditions in the second cutting step being configured to be different from each other, and the amount of damage to the main surface A and the amount of damage to the main surface B being made different from each other. There is thereby provided a novel method for producing a silicon wafer with which there is obtained a silicon wafer having a curve.
Inventors:
TANAKA YUKI (JP)
TOYODA SHIRO (JP)
TOYODA SHIRO (JP)
Application Number:
PCT/JP2022/011671
Publication Date:
November 24, 2022
Filing Date:
March 15, 2022
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
B24B27/06; B28D5/04; H01L21/304
Domestic Patent References:
| WO2008035530A1 | 2008-03-27 | |||
| WO2015125366A1 | 2015-08-27 |
Foreign References:
| JP2013032278A | 2013-02-14 | |||
| JP2014195025A | 2014-10-09 |
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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