Title:
METHOD FOR PRODUCING SUBSTRATE FOR GROUP III NITRIDE SEMICONDUCTOR ELEMENT FABRICATION, METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR FREE-STANDING SUBSTRATE OR GROUP III NITRIDE SEMICONDUCTOR ELEMENT, AND GROUP III NITRIDE GROWTH SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2012/043885
Kind Code:
A1
Abstract:
Provided is a method for producing a substrate for group III nitride semiconductor element fabrication with an improved area ratio of chromium nitride microcrystals with a triangular pyramid shape in a chromium nitride layer surface. That is, there is provided a method for producing a substrate for group III nitride semiconductor element fabrication comprising a depositing step of forming a chromium layer on a base substrate for growth, a nitriding step of nitriding the chromium layer under prescribed conditions to form a chromium nitride layer, and a crystalline layer growth step of epitaxially growing at least one layer of a group III nitride semiconductor layer on the chromium nitride layer, characterized in that the chromium layer is deposited by a sputtering method such that the deposition rate is in the range of 7 to 65 Å/sec in the sputtering particle range and the thickness is in the range of 50 to 300 Å, the chromium nitride layer is formed in a MOCVD growth furnace with a furnace pressure of 6.666-66.66 kPa and a temperature of 1,000°C or more in a gas atmosphere containing ammonia gas, the gas component other than the ammonia gas in the gas atmosphere is a carrier gas comprising a nitrogen gas and a hydrogen gas, and the content ratio of the nitrogen gas in the carrier gas is in the range of 60 to 100 volume%.
Inventors:
TOBA RYUICHI (JP)
MIYASHITA MASAHITO (JP)
YAO TAKAFUMI (JP)
FUJII KATSUSHI (JP)
MIYASHITA MASAHITO (JP)
YAO TAKAFUMI (JP)
FUJII KATSUSHI (JP)
Application Number:
PCT/JP2011/073154
Publication Date:
April 05, 2012
Filing Date:
September 30, 2011
Export Citation:
Assignee:
DOWA ELECTRONICS MATERIALS CO (JP)
DOWA HOLDINGS CO LTD (JP)
TOBA RYUICHI (JP)
MIYASHITA MASAHITO (JP)
YAO TAKAFUMI (JP)
FUJII KATSUSHI (JP)
DOWA HOLDINGS CO LTD (JP)
TOBA RYUICHI (JP)
MIYASHITA MASAHITO (JP)
YAO TAKAFUMI (JP)
FUJII KATSUSHI (JP)
International Classes:
C30B29/38; C23C14/14; C23C14/34; C23C14/58; C30B25/18; H01L33/32
Foreign References:
| JP2008110912A | 2008-05-15 | |||
| JP2008088026A | 2008-04-17 | |||
| JP2009054888A | 2009-03-12 |
Attorney, Agent or Firm:
SUGIMURA, KENJI (JP)
Kenji Sugimura (JP)
Kenji Sugimura (JP)
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Claims:
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