Title:
METHOD FOR PRODUCING SUBSTRATE MATERIAL AND SEMICONDUCTOR DEVICE INCLUDING PLASMA PROCESSING
Document Type and Number:
WIPO Patent Application WO/2003/079456
Kind Code:
A1
Abstract:
A thermal oxide film (6) of 5 nm thick formed on a wafer is exposed to nitrogen plasma generated by low speed electron impact method for one hour to nitride the thermal oxide film (6) thus forming a silicon oxynitride film (7). A platinum film (8) about 3 nm thick is then deposited on the silicon oxynitride film (7) and treated at 300 °C for one hour in dry oxygen in an electric furnace to produce a reformed silicon oxynitride film (9). The platinum film (8) is removed by etching. An aluminum gate electrode (11) is then formed on the reformed silicon oxynitride film (9) to obtain an MNOS diode exhibiting good electrical characteristics.
Inventors:
KOBAYASHI HIKARU (JP)
Application Number:
PCT/JP2002/010422
Publication Date:
September 25, 2003
Filing Date:
October 07, 2002
Export Citation:
Assignee:
JAPAN SCIENCE & TECH CORP (JP)
KOBAYASHI HIKARU (JP)
KOBAYASHI HIKARU (JP)
International Classes:
H01L21/316; H01L21/3105; H01L21/314; H01L21/336; H01L29/78; H01L29/786; H01L29/94; (IPC1-7): H01L29/94; H01L21/28; H01L21/283; H01L21/318; H01L29/786; H01L31/04
Foreign References:
| JP2002057154A | 2002-02-22 | |||
| EP0886308A2 | 1998-12-23 | |||
| EP0969506A2 | 2000-01-05 |
Attorney, Agent or Firm:
Noguchi, Shigeo (8-1 Motomachi 2-chome, Naniwa-k, Osaka-shi Osaka, JP)
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