Title:
METHOD FOR PRODUCING THIN FILM TRANSISTOR, AND THIN FILM TRANSISTOR AND IMAGE DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2011/122205
Kind Code:
A1
Abstract:
Disclosed are a thin film transistor and an image display device that are capable of being produced more simply and with fewer production steps. The method for producing a thin film transistor, as set forth in claim 1 of the present invention, is characterized by having a first step for forming a gate electrode on a substrate, a second step for forming a gate insulating film so as to cover the aforementioned gate electrode, a third step for forming a source electrode and a drain electrode on the aforementioned gate insulating film, a fourth step for forming a semiconductor layer that connects to the aforementioned source electrode and drain electrode, a fifth step for forming a protective film so as to overlap part of the aforementioned source and drain electrodes directly above the aforementioned semiconductor layer, and a sixth step for patterning of the aforementioned semiconductor layer with the aforementioned protective film as a mask.
Inventors:
IKEDA NORIAKI (JP)
MIYAZAKI CHIHIRO (JP)
ITO MANABU (JP)
MIYAZAKI CHIHIRO (JP)
ITO MANABU (JP)
Application Number:
PCT/JP2011/054639
Publication Date:
October 06, 2011
Filing Date:
March 01, 2011
Export Citation:
Assignee:
TOPPAN PRINTING CO LTD (JP)
IKEDA NORIAKI (JP)
MIYAZAKI CHIHIRO (JP)
ITO MANABU (JP)
IKEDA NORIAKI (JP)
MIYAZAKI CHIHIRO (JP)
ITO MANABU (JP)
International Classes:
H01L21/336; G02F1/1368; G09F9/30; H01L29/786; H05B44/00
Foreign References:
| JP2006100808A | 2006-04-13 | |||
| JP2008235861A | 2008-10-02 | |||
| JP2008065225A | 2008-03-21 |
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Claims: