Title:
METHOD FOR THE PRODUCTION OF LOW DEFECT DENSITY SILICON
Document Type and Number:
WIPO Patent Application WO2003004734
Kind Code:
A9
Abstract:
A process for the preparation of a silicon single ingot in accordance with the Czochralski method. The process for growing the single crystal silicon ingot comprises controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G0, during the growth of a constant diameter portion of the crystal over a temperature range from solidification to a temperature of no less than about 1325 C to initially produce in the constant diameter portion of the ingot a series of predominant intrinsic point defects including vacancy dominated regions and silicon self interstitial dominated regions, alternating along the axis, and cooling the regions from the temperature of solidification at a rate which allows silicon self-interstitial atoms to diffuse radially to the lateral surface and to diffuse axially to vacancy dominated regions to reduce the concentration intrinsic point defects in each region.
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Inventors:
VORONKOV VLADIMIR
FALSTER ROBERT J
BANAN MOHSEN
FALSTER ROBERT J
BANAN MOHSEN
Application Number:
PCT/US2001/044081
Publication Date:
April 10, 2003
Filing Date:
October 22, 2001
Export Citation:
Assignee:
MEMC ELECTRONIC MATERIALS (US)
International Classes:
C30B29/06; A61K31/427; A61K31/513; A61K31/675; A61K31/7008; A61K31/704; C30B15/00; C30B15/20; (IPC1-7): C30B29/06; C30B15/00
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