METHOD FOR QUICKLY EVALUATING DEPTH OF SUBSURFACE DAMAGE DURING SILICON WAFER THINNING

Title:

METHOD FOR QUICKLY EVALUATING DEPTH OF SUBSURFACE DAMAGE DURING SILICON WAFER THINNING

Document Type and Number:

WIPO Patent Application WO/2020/077671

Kind Code:

A1

Abstract:

The present invention provides a method for quickly evaluating the depth of subsurface damage during silicon wafer thinning, belonging to the field of ultra-precision processing of semiconductor wafer materials. The method comprises: determining grinding parameters of a wafer, calculating a single abrasive grain cutting depth, establishing a relationship between a subsurface damage depth and the cutting depth, substituting the single abrasive grain cutting depth into the relationship between the subsurface damage depth and the cutting depth, obtaining a relationship between the grinding parameter and the subsurface damage depth, and quickly evaluating the subsurface damage depth. By using the method for quickly evaluating the depth of subsurface damage provided in the present invention, it is possible to predict the depth of subsurface damage of silicon wafers with respect to different grinding parameters (the mesh number of grinding wheel, spindle feed rate, spindle rotation speed, and wafer rotation speed) during a grinding design stage, thereby improving the grinding quality of the wafers, and reducing the grinding cost of the wafers.

Inventors:

QIN FEI (CN)
ZHANG LIXIANG (CN)
ZHAO SHUAI (CN)
CHEN PEI (CN)
AN TONG (CN)
DAI YANWEI (CN)

Application Number:

PCT/CN2018/112612

Publication Date:

April 23, 2020

Filing Date:

October 30, 2018

Export Citation:

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Assignee:

UNIV BEIJING TECHNOLOGY (CN)

International Classes:

B24B1/00; B24B49/04

Foreign References:

CN103597578A	2014-02-19
CN108515460A	2018-09-11
CN108340214A	2018-07-31

Other References:

JINGLONG SUN ET AL: "A predictive model of grinding force in silicon wafer seIf-rotating grinding", INTERNATIONAL JOURNAL OF MACHINE TOOLS & MANUFACTURE, vol. 109, October 2016 (2016-10-01), pages 74 - 86, XP055703227, ISSN: 0890-6955

Attorney, Agent or Firm:

BEIJING SIHAI TIANDA INTELLECTUAL PROPERTY AGENCY LTD. (CN)

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