Title:
METHOD FOR READING AND WRITING MEMORY CELLS IN THREE-DIMENSIONAL FERAM
Document Type and Number:
WIPO Patent Application WO/2022/000486
Kind Code:
A1
Abstract:
A programming method for a three-dimensional ferroelectric memory device is disclosed. The programming method includes applying a first voltage on a selected word line of a target memory cell. The target memory cell has a first logic state and a second logic state corresponding to a first threshold voltage and a second threshold voltage, respectively. The first and second threshold voltages are determined by two opposite electric polarization directions of a ferroelectric film in the target memory cell. The programming method also includes applying a second voltage on a selected bit line, where a voltage difference between the first and second voltages has a magnitude larger than a coercive voltage of the ferroelectric film such that the target memory cell is switched from the first logic state to the second logic state.
Inventors:
TANG QIANG (CN)
Application Number:
PCT/CN2020/100210
Publication Date:
January 06, 2022
Filing Date:
July 03, 2020
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
G11C11/22
Foreign References:
| CN101256840A | 2008-09-03 | |||
| CN107665720A | 2018-02-06 | |||
| CN108986865A | 2018-12-11 | |||
| US20060133129A1 | 2006-06-22 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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