Title:
METHOD FOR REALIZING CONTENT-ADDRESSABLE MEMORY BASED ON FIELD EFFECT TRANSISTORS HAVING BIPOLAR CHARACTERISTICS
Document Type and Number:
WIPO Patent Application WO/2024/060611
Kind Code:
A1
Abstract:
A method of realizing a content-addressable memory (CAM) based on field effect transistors having bipolar characteristics. By inserting a storage layer between a gate dielectric layer and a control gate of a field effect transistor having a bipolar characteristic and a source-drain symmetry, the threshold voltage is adjusted for information storage; further, a non-monotonic transfer characteristic of said field effect transistor is used for an input search, thus implementing a linearly inseparable comparison operation required by a CAM unit on a single field effect transistor having a bipolar characteristic adjustable threshold. Compared with the CAM designs based on traditional MOSFETs, the present invention has remarkably reduced unit area and a simpler programming and search operation process, accordingly realizing higher energy efficiency and extra wide application space.
Inventors:
HUANG RU (CN)
XU WEIKAI (CN)
LUO JIN (CN)
HUANG QIANQIAN (CN)
XU WEIKAI (CN)
LUO JIN (CN)
HUANG QIANQIAN (CN)
Application Number:
PCT/CN2023/090200
Publication Date:
March 28, 2024
Filing Date:
April 24, 2023
Export Citation:
Assignee:
UNIV BEIJING (CN)
International Classes:
G11C11/22; G11C5/06
Foreign References:
| CN115472194A | 2022-12-13 | |||
| CN114743578A | 2022-07-12 | |||
| CN114758695A | 2022-07-15 | |||
| CN114898788A | 2022-08-12 |
Attorney, Agent or Firm:
BEIJING WANXIANGXINYUE INTELLECTUAL PROPERTY OFFICE (CN)
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