METHOD OF TRANSFERRING THIN FILM DEVICES, THIN FILM DEVICE, THIN FILM INTEGRATED CIRCUIT DEVICE, ACTIVE MATRIX SUBSTRATE, LIQUID CRYSTAL DISPLAY, AND ELECTRONIC APPARATUS

Title:

METHOD OF TRANSFERRING THIN FILM DEVICES, THIN FILM DEVICE, THIN FILM INTEGRATED CIRCUIT DEVICE, ACTIVE MATRIX SUBSTRATE, LIQUID CRYSTAL DISPLAY, AND ELECTRONIC APPARATUS

Document Type and Number:

WIPO Patent Application WO/1999/001899

Kind Code:

A1

Abstract:

A method of manufacturing thin film devices comprising the steps of transferring a thin film device formed on a substrate onto a primary transfer body and then transferring it onto a secondary transfer body. A first isolation layer (120) such as amorphous silicon is provided over a substrate (100) that can transmit a laser beam. Over the substrate (100) is formed a thin film device (140) such as TFT, over which a second isolation layer (160) such as thermally fusible adhesive layer is formed. A primary transfer body (180) is formed over the second isolation layer. Light is applied to the resultant product to weaken the bonding force of the first isolation layer so that the substrate (100) can be removed to thereby transfer the thin film device (140) onto the primary transfer body (180). Further, a secondary transfer body (200) is bonded to the underside of the exposed thin film device (140) through an adhesive layer (190). The second isolation layer is then thermally fused to weaken its bonding force and the primary transfer body is removed. As a result, the thin film device (140) is transferred onto the secondary transfer body (200) while maintaining the same relation as the lamination relation with the substrate (100).

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Inventors:

INOUE SATOSHI (JP)
SHIMODA TATSUYA (JP)
MIYAZAWA WAKAO (JP)

Application Number:

PCT/JP1998/002918

Publication Date:

January 14, 1999

Filing Date:

June 30, 1998

Export Citation:

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Assignee:

SEIKO EPSON CORP (JP)
INOUE SATOSHI (JP)
SHIMODA TATSUYA (JP)
MIYAZAWA WAKAO (JP)

International Classes:

G02F1/1368; H01L21/02; H01L21/20; G02F1/136; H01L21/336; H01L21/762; H01L21/77; H01L21/84; H01L27/12; H01L29/786; G02F1/1362; (IPC1-7): H01L27/12; H01L21/336; H01L29/786; G02F1/136

Foreign References:

JPH08262475A	1996-10-11
JPH05218365A	1993-08-27
JPH06289421A	1994-10-18
JPS6461943A	1989-03-08
JPH08288522A	1996-11-01

Other References: