METHOD FOR TREATING INNER SURFACE OF CHLORINE TRIFLUORIDE SUPPLY PATH IN DEVICE USING CHLORINE TRIFLUORIDE

WIPO Patent Application WO/2013/118260

A1

Provided is a method for treating the inner surface of a chlorine trifluoride supply path that enables reliable suppression of drops in the concentration of ClF3 in a reaction chamber during treatment work. A gas supply path (2) and a gas discharge path (3) are integrally connected to a treatment chamber (1) of a treatment device in which chlorine trifluoride is used as an etching gas. Chlorine trifluoride gas with a concentration equal to or greater than the concentration of the chlorine trifluoride gas supplied during etching treatment operation is allowed to act on the inner surfaces of at least the treatment chamber (1) and the gas supply path (2) from among the treatment chamber (1), the gas supply path (2), and the gas discharge path (3), thus coating the inner surfaces of at least the treatment chamber (1) and the gas supply path (2) with a fluoride film.

JPS61193451	MANUFACTURE OF SEMICONDUCTOR DEVICE
JP7134695	PLASMA PROCESSING APPARATUS AND POWER CONTROL METHOD
WO/2004/019396	PLASMA PROCESSING METHOD AND PLASMA PROCESSING DEVICE

YOSHINO YU (JP)
KOIKE KUNIHIKO (JP)
SAEDA MANABU (JP)
MANABE TOSHIKI (JP)

PCT/JP2012/052862

August 15, 2013

February 08, 2012

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IWATANI CORP (JP)
YOSHINO YU (JP)
KOIKE KUNIHIKO (JP)
SAEDA MANABU (JP)
MANABE TOSHIKI (JP)

H01L21/3065; H01L21/205

JP2009197274A	2009-09-03
JP2000219596A	2000-08-08

SUZUE Shoji (JP)
Shoji Suzue (JP)

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