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Title:
METHOD UTILIZING DRILLING AND GEL INJECTION TO TEST FRACTURE DEVELOPMENT CHARACTERISTICS OF HANGING WALL AND FOOTWALL STRATA
Document Type and Number:
WIPO Patent Application WO/2023/131359
Kind Code:
A1
Abstract:
A method utilizing drilling and gel injection to test the fracture development characteristics of hanging wall and footwall strata, the method comprising the following steps: (1) selecting a suitable drilling position in a downhole tunnel; (2) drilling a small-aperture drill hole; (3) pushing a gel injection drill bit into the drill hole, and causing the front end of the gel injection drill bit to finally stop at a position 2m from the bottom of the drill hole; (4) connecting a gel injection mixing apparatus to a gel injection pipeline and performing a segment-by-segment gel injection operation; (5) resting the gel injection drill bit for 0.5-1 days, and removing same after the silica gel has completely solidified; (6) performing a segment-by-segment coring operation, and sending all of the extracted silica gel rock cores to a laboratory; (7) testing, researching and analyzing the extracted silica gel rock cores. The method is based on scientific principles, convenient to operate and low in cost, allows for accurately quantifying and qualitatively grasping the characteristics of fracture development in a drill hole, can be applied to mines requiring testing of the development characteristics of water diversion fraction zones and footwall failure zones, and is highly worthy of popularization.

Inventors:
LI ZHENHUA (CN)
WANG WENQIANG (CN)
DU FENG (CN)
CAO ZHENGZHENG (CN)
YAO BANGHUA (CN)
HONG ZIJIE (CN)
XIA DAILIN (CN)
LI AO (CN)
WU YONGJIANG (CN)
Application Number:
PCT/CN2023/083837
Publication Date:
July 13, 2023
Filing Date:
March 24, 2023
Export Citation:
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Assignee:
UNIV HENAN POLYTECHNIC (CN)
International Classes:
E21B49/00
Foreign References:
CN114837661A2022-08-02
CN107044280A2017-08-15
CN104265219A2015-01-07
CN210104590U2020-02-21
CN107676107A2018-02-09
US4694916A1987-09-22
Attorney, Agent or Firm:
BEIJING HECHUANG ZHIXIN PATENT AGENCY CO., LTD et al. (CN)
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