Title:
METHODS FOR FORMING ON-CHIP CAPACITOR STRUCTURES IN SEMICONDUCTOR DEVICES
Document Type and Number:
WIPO Patent Application WO/2022/047645
Kind Code:
A1
Abstract:
Semiconductor devices and methods for forming the same are disclosed. A first interlayer dielectric (ILD) layer (402) is formed on a first side of a substrate (408). A plurality of first contacts (404) each extending vertically through the first interlayer dielectric layer (402) and in contact with the substrate (408) are formed. The substrate (408) is thinned from a second side opposite to the first side of the substrate (408). A plurality of dielectric cuts (410) each extending vertically through the thinned substrate (408) are formed to separate the thinned substrate (408) into a plurality of semiconductor blocks, such that the plurality of semiconductor blocks are in contact with the plurality of first contacts (404), respectively.
Inventors:
CHEN LIANG (CN)
Application Number:
PCT/CN2020/112962
Publication Date:
March 10, 2022
Filing Date:
September 02, 2020
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L27/11582; G11C5/10
Foreign References:
| CN111566815A | 2020-08-21 | |||
| CN111566816A | 2020-08-21 | |||
| CN110164867A | 2019-08-23 | |||
| CN108028223A | 2018-05-11 | |||
| CN110574163A | 2019-12-13 | |||
| US10403631B1 | 2019-09-03 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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