Title:
METHODS FOR MANUFACTURING PASSIVATION LAYER AND THIN FILM TRANSISTOR ARRAY SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2012/068752
Kind Code:
A1
Abstract:
Methods for manufacturing a passivation layer and a thin film transistor array substrate are provided. The method for manufacturing the passivation layer includes the following steps: placing the substrate in a vacuum reaction chamber(S301); providing ammonia gas and nitrogen gas to the vacuum reaction chamber(S302); forming plasma to evaporate water-vapor(S303); and forming the passivation layer on the substrate(S304). The method for manufacturing the passivation layer can be applied to the method for manufacturing the thin film transistor array substrate. The quality of the passivation layer can be ensured.
Inventors:
HE CHENGMING (CN)
LIU FENGJU (CN)
LIU FENGJU (CN)
Application Number:
PCT/CN2010/079684
Publication Date:
May 31, 2012
Filing Date:
December 13, 2010
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECT (CN)
HE CHENGMING (CN)
LIU FENGJU (CN)
HE CHENGMING (CN)
LIU FENGJU (CN)
International Classes:
H01L21/314; H01L21/77; H01L27/12
Foreign References:
| CN101681932A | 2010-03-24 | |||
| US20090200553A1 | 2009-08-13 | |||
| CN101465296A | 2009-06-24 | |||
| JP2000188288A | 2000-07-04 |
Attorney, Agent or Firm:
ESSEN PATENT & TRADEMARK AGENCY (CN)
深圳翼盛智成知识产权事务所(普通合伙) (CN)
深圳翼盛智成知识产权事务所(普通合伙) (CN)
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Claims: