Title:
Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL, LAMINATE THEREOF AND THEIR PRODUCTION METHODS
Document Type and Number:
WIPO Patent Application WO/2008/114845
Kind Code:
A1
Abstract:
Disclosed is an Mg-containing ZnO mixed single crystal, which is characterized by containing an Mg-containing ZnO semiconductor having a band gap (Eg) satisfying 3.30 eV < Eg ≤ 3.54 eV and having a film thickness of not less than 5 μm. Also disclosed is a method for producing an Mg-containing ZnO mixed single crystal by liquid-phase epitaxial growth, which is characterized in that an Mg-containing ZnO mixed single crystal is grown on a substrate by mixing and melting ZnO and MgO as solutes and PbO and Bi2O3 (or alternatively, PbF2 and PbO) as solvents together, and then bringing a substrate into direct contact with the thus-obtained melt.
Inventors:
SEKIWA HIDEYUKI (JP)
KOBAYASHI JUN (JP)
OHASHI NAOKI (JP)
SAKAGUCHI ISAO (JP)
KOBAYASHI JUN (JP)
OHASHI NAOKI (JP)
SAKAGUCHI ISAO (JP)
Application Number:
PCT/JP2008/055179
Publication Date:
September 25, 2008
Filing Date:
March 14, 2008
Export Citation:
Assignee:
MITSUBISHI GAS CHEMICAL CO (JP)
NAT INST FOR MATERIALS SCIENCE (JP)
SEKIWA HIDEYUKI (JP)
KOBAYASHI JUN (JP)
OHASHI NAOKI (JP)
SAKAGUCHI ISAO (JP)
NAT INST FOR MATERIALS SCIENCE (JP)
SEKIWA HIDEYUKI (JP)
KOBAYASHI JUN (JP)
OHASHI NAOKI (JP)
SAKAGUCHI ISAO (JP)
International Classes:
C30B29/22; C30B19/02; H01L21/368; H01L33/28
Domestic Patent References:
WO2007100146A1 | 2007-09-07 |
Foreign References:
JP2002093822A | 2002-03-29 | |||
JP2005072067A | 2005-03-17 | |||
JP2003046081A | 2003-02-14 |
Other References:
SATO H. ET AL.: "Growth of MgxZn1-xO/ZnO heterostructures by liquid phase epitaxy", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 45, no. 1A, 2006, pages 190 - 193, XP008118494
FISCHER K. ET AL.: "On the preparation of ZnO single crystals", CRYSTAL RESEARCH AND TECHNOLOGY, vol. 16, no. 6, 1981, pages 689 - 694, XP003017362
CHEN N.B. ET AL.: "Recent progress in research of MgxZn1-xO alloys", MATERIALS SCIENCE & ENGINEERING B, vol. 126, no. 1, 2006, pages 16 - 21, XP005175918
A. OHTOMO, APPLIED PHYSICS LETTERS, vol. 72, no. 19, 11 May 1998 (1998-05-11), pages 2466 - 2468
MAKI ET AL., JPN. J. APPL. PHYS., vol. 42, 2003, pages 75 - 77
See also references of EP 2135978A4
FISCHER K. ET AL.: "On the preparation of ZnO single crystals", CRYSTAL RESEARCH AND TECHNOLOGY, vol. 16, no. 6, 1981, pages 689 - 694, XP003017362
CHEN N.B. ET AL.: "Recent progress in research of MgxZn1-xO alloys", MATERIALS SCIENCE & ENGINEERING B, vol. 126, no. 1, 2006, pages 16 - 21, XP005175918
A. OHTOMO, APPLIED PHYSICS LETTERS, vol. 72, no. 19, 11 May 1998 (1998-05-11), pages 2466 - 2468
MAKI ET AL., JPN. J. APPL. PHYS., vol. 42, 2003, pages 75 - 77
See also references of EP 2135978A4
Attorney, Agent or Firm:
KOBAYASHI, Hiroshi et al. (IKUBO & KATAYAMA Fukuoka Bldg. 9th Fl.,8-7, Yaesu 2-chome, Chuo-k, Tokyo 28, JP)
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