MgO TARGET FOR SPUTTERING

WIPO Patent Application WO/2013/005690

A1

Provided is an MgO target for sputtering, which is capable of increasing the film formation rate even in cases where MgO is used as a sputtering target when an MgO film is formed. An MgO target for sputtering, which is mainly composed of MgO and a conductive substance. The MgO target for sputtering is characterized in that the conductive substance is capable of providing a formed MgO film with orientation when the conductive substance is used together with MgO for the film formation by DC sputtering.

JP2666049	[Title of Invention] Method for Manufacturing ITO Sputtering Target
JPH1046332	METALLIC THIN FILM DEPOSITION DEVICE
JPH08249929	TRANSPARENT ELECTRODE FILM FOR INPUT PANEL OF COORDINATE DATA INPUT APPARATUS

SANO SATORU (JP)
NISHIMURA YOSHIHIRO (JP)
WATANABE TAKAYUKI (JP)
KATOU YUUZOU (JP)
UEKI AKIRA (JP)
MITOMI SHINZO (JP)
TAKASU MASANOBU (JP)
HARA YUSUKE (JP)
TANAKA TAKAAKI (JP)

PCT/JP2012/066789

January 10, 2013

June 29, 2012

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UBE MAT IND LTD (JP)
NIPPON TUNGSTEN (JP)
SANO SATORU (JP)
NISHIMURA YOSHIHIRO (JP)
WATANABE TAKAYUKI (JP)
KATOU YUUZOU (JP)
UEKI AKIRA (JP)
MITOMI SHINZO (JP)
TAKASU MASANOBU (JP)
HARA YUSUKE (JP)
TANAKA TAKAAKI (JP)

C23C14/34; C04B35/04; G11B5/851

JP2001352109A	2001-12-21
JP2009511742A	2009-03-19
JP2003073820A	2003-03-12
JP2005525463A	2005-08-25
JP2005179129A	2005-07-07
JP2012094202A	2012-05-17

ITAMI, Masaru et al. (JP)
Itami 勝 (JP)

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