Title:
MICRO LIGHT-EMITTING DIODE EPITAXIAL WAFER, DISPLAY ARRAY AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/129726
Kind Code:
A1
Abstract:
Provided are a micro light-emitting diode epitaxial wafer, a display array and a manufacturing method therefor, belonging to the technical field of semiconductors. The method comprises: providing a circuit board, wherein the circuit board comprises a substrate and a driving circuit layer located on the substrate; forming an insulating layer on the driving circuit layer, wherein the insulating layer is formed by using a liquid insulating material mixed with diamond particles; forming, in the insulating layer, multiple through holes that extend to the driving circuit layer, and filling the multiple through holes with conductive materials; and arranging multiple micro light-emitting diode chips on the insulating layer, such that the micro light-emitting diode chips are connected to corresponding driving circuits in the driving circuit layer by means of the conductive materials in the corresponding through holes.
Inventors:
LAN YE (CN)
WU ZHIHAO (CN)
LI PENG (CN)
WU ZHIHAO (CN)
LI PENG (CN)
Application Number:
PCT/CN2020/138951
Publication Date:
July 01, 2021
Filing Date:
December 24, 2020
Export Citation:
Assignee:
HC SEMITEK SUZHOU CO LTD (CN)
International Classes:
H01L33/00; H01L27/15; H01L33/20
Foreign References:
| CN111180478A | 2020-05-19 | |||
| CN110494983A | 2019-11-22 | |||
| CN110010752A | 2019-07-12 | |||
| KR20190081879A | 2019-07-09 | |||
| CN109148721A | 2019-01-04 | |||
| CN103078017A | 2013-05-01 | |||
| CN208781881U | 2019-04-23 | |||
| CN201667345U | 2010-12-08 | |||
| JP2018111814A | 2018-07-19 | |||
| JP2019066517A | 2019-04-25 |
Attorney, Agent or Firm:
BEIJING SAN GAO YONG XIN INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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