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Patent Searching and Data


Title:
MICRO LIGHT EMITTING DIODE, MANUFACTURING METHOD THEREFOR, AND DISPLAY
Document Type and Number:
WIPO Patent Application WO/2018/072345
Kind Code:
A1
Abstract:
A micro light emitting diode, a manufacturing method therefor and a display. The method comprises: forming a buffer layer column (s11); forming in sequence, on the outer wall of the buffer layer column, layers composing a PN junction (s12); forming a first electrode outside the layers composing the PN junction, and forming a second electrode inside the layers composing the PN junction after the buffer layer column is removed, the first electrode and the second electrode being insulated from each other outside the layers composing the PN junction (s13). The micro light emitting diode manufactured with the described method has a tubular structure, and the tubular micro light emitting diode structure can effectively reduce the impedance of the passage between the first electrode and the second electrode via the layers composing the PN junction, thereby improving conductivity, and increasing the light-emitting efficiency of the micro light emitting diode. At the same time, the structure of a micro-tube/nanotube of the micro light emitting diode increases the effective functioning area of the PN junction, and increases current density, thereby effectively increasing the light-emitting efficiency of the micro light-emitting diode, improving the monochromaticity of the micro light-emitting diode.

Inventors:
LIANG BO (CN)
WANG WEI (CN)
Application Number:
PCT/CN2017/070195
Publication Date:
April 26, 2018
Filing Date:
January 05, 2017
Export Citation:
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Assignee:
WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD (CN)
International Classes:
H01L33/00; H01L33/20
Foreign References:
CN106229394A2016-12-14
CN103988321A2014-08-13
CN1979705A2007-06-13
CN103337512A2013-10-02
CN102593305A2012-07-18
US20080305568A12008-12-11
US20150118777A12015-04-30
Attorney, Agent or Firm:
CHINA WISPRO INTELLECTUAL PROPERTY LLP. (CN)
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