Title:
MODIFIED TUNNEL OXIDE LAYER AND PREPARATION METHOD, TOPCON STRUCTURE AND PREPARATION METHOD, AND SOLAR CELL
Document Type and Number:
WIPO Patent Application WO/2024/007495
Kind Code:
A1
Abstract:
The present invention provides a modified tunnel oxide layer and a preparation method, a TOPCon structure and a preparation method, and a solar cell. The modified tunnel oxide layer is SiOx subjected to plasma surface treatment, and the proportion of the content of Si4+ in SiOx is greater than or equal to 18%. Compared with a silicon oxide layer prepared in the prior art, the diffusion rate of boron in the modified silicon oxide layer is low, so that the damage effect of boron on the tunnel oxide layer is effectively reduced, the integrity of the silicon oxide layer is improved, and the chemical passivation effect is kept. The modified tunnel oxide layer can significantly improve the performance index of the TOPCon structure.
Inventors:
YAN BAOJIE (CN)
ZENG YUHENG (CN)
XING HAIYANG (CN)
YE JICHUN (CN)
LIU WEI (CN)
LIAO MINGDUN (CN)
MA DIAN (CN)
LIN NA (CN)
DING ZETAO (CN)
ZENG YUHENG (CN)
XING HAIYANG (CN)
YE JICHUN (CN)
LIU WEI (CN)
LIAO MINGDUN (CN)
MA DIAN (CN)
LIN NA (CN)
DING ZETAO (CN)
Application Number:
PCT/CN2022/129404
Publication Date:
January 11, 2024
Filing Date:
November 03, 2022
Export Citation:
Assignee:
NINGBO INST MATERIALS TECH & ENG CAS (CN)
International Classes:
H01L21/02; H01L31/0216; H01L31/068; H01L31/18
Foreign References:
| CN115274404A | 2022-11-01 | |||
| CN112420881A | 2021-02-26 | |||
| CN105513960A | 2016-04-20 | |||
| CN104505419A | 2015-04-08 | |||
| CN112271235A | 2021-01-26 |
Attorney, Agent or Firm:
NINGBO WITS IP SERVICES CO., LTD. (CN)
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