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Title:
MONOLITHIC INTEGRATED SEMICONDUCTOR RANDOM LASER
Document Type and Number:
WIPO Patent Application WO/2019/095528
Kind Code:
A1
Abstract:
A monolithic integrated semiconductor random laser consists of a gain zone (A) and a random feedback zone (B), and comprises: a base (2); a lower limiting layer (3) formed on the base (2); an active layer (4) formed on the lower limiting layer (3); an upper limiting layer (5) formed on the active layer (4); a strip-shaped waveguide layer (6) longitudinally formed on a middle portion of the upper limiting layer (5); a P+ electrode layer (7) formed on the waveguide layer (6) and divided into two sections by a separation recess (8); and a N+ electrode layer (1) formed on a back surface of the lower limiting layer (3). The two sections of the P+ electrode layer (7) respectively correspond to the gain zone (A) and the random feedback zone (B). The random feedback zone (B) adopts a doped waveguide (9) to provide random feedback with respect to light emitted by the gain zone (A) so as to generate random laser light. The semiconductor laser emits laser light having a random intensity at a random frequency. Moreover, the semiconductor random laser adopts a monolithic integration structure, and thus has a light weight, a compact size, stable performance and high integration.

Inventors:
ZHAGN MINGJIANG (CN)
ZHANG JIANZHONG (CN)
LV TIANSHUANG (CN)
QIAO LIJUN (CN)
LIU YI (CN)
ZHAO TONG (CN)
WANG ANBANG (CN)
WANG YUNCAI (CN)
Application Number:
PCT/CN2018/000304
Publication Date:
May 23, 2019
Filing Date:
August 27, 2018
Export Citation:
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Assignee:
UNIV TAIYUAN TECHNOLOGY (CN)
International Classes:
H01S5/34
Foreign References:
CN107809058A2018-03-16
CN104953468A2015-09-30
CN103229371A2013-07-31
CN104501843A2015-04-08
CN107221829A2017-09-29
CN103107484A2013-05-15
Attorney, Agent or Firm:
TAIYUAN KEWEI PATENT OFFICE (GENERAL PARTNER) (CN)
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