Title:
MOSFET DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/169592
Kind Code:
A1
Abstract:
Provided are a MOSFET device and a manufacturing method therefor. An embodiment comprises: first forming a first implant area which is easy to diffuse, and then sequentially forming a second implant area which is not easy to diffuse and has a deeper junction; upon completing plasma implantation of a source area, activating the first implant area, so that a needed well area is formed by means of junction diffusion of the first implant area, the second implant area being used for increasing the depth of the well area. Consequently, a problem in the prior art where a surface of a substrate at a channel is broken when a P well is formed directly by means of repeated Al ion implantation, causing a rough channel surface of a device is prevented, and high conduction performance of the device is achieved. Additionally, a same mask layer can be utilized for ion implantation of the first implant area, the second implant area, and the source area, process implementation is simple, and the amount of photoetching can be effectively reduced.
Inventors:
LI XIANG (CN)
XIE ZHIPING (CN)
CONG MAOJIE (CN)
LIANG XINYING (CN)
ZHANG YUKAI (CN)
XIE ZHIPING (CN)
CONG MAOJIE (CN)
LIANG XINYING (CN)
ZHANG YUKAI (CN)
Application Number:
PCT/CN2023/082486
Publication Date:
September 14, 2023
Filing Date:
March 20, 2023
Export Citation:
Assignee:
YUEZHOU SEMICONDUCTOR MFG ELECTRONICS SHAOXING CORP (CN)
International Classes:
H01L29/78; H01L21/223; H01L21/265; H01L21/336; H01L29/08; H01L29/10
Foreign References:
| CN115458604A | 2022-12-09 | |||
| CN108352407A | 2018-07-31 | |||
| JP2000082812A | 2000-03-21 | |||
| CN112701151A | 2021-04-23 | |||
| US20170084700A1 | 2017-03-23 |
Attorney, Agent or Firm:
SHANGHAI SAVVY INTELLECTUAL PROPERTY AGENCY (CN)
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