Title:
MRAM INTEGRATION WITH SELF-ALIGNED DIRECT BACK SIDE CONTACT
Document Type and Number:
WIPO Patent Application WO/2024/032536
Kind Code:
A1
Abstract:
A back side contact structure is provided that directly connects a first electrode (52) of a MRAM, which is present in a back side of a wafer, to a source/drain structure (36) of a transistor. The back side contact is self-aligned to the source/drain structure (36) of the transistor as well as to the first electrode (52) of the MRAM. The close proximity between the MRAM and the source/drain structure (36) increases the speed of the device. MRAM yield is not compromised since no re-sputtering of back side contact metal onto the MRAM occurs.
Inventors:
XIE RUILONG (US)
LANZILLO NICHOLAS ANTHONY (US)
MOTOYAMA KOICHI (US)
ANDERSON BRENT A (US)
RIZZOLO MICHAEL (US)
CLEVENGER LAWRENCE A (US)
LANZILLO NICHOLAS ANTHONY (US)
MOTOYAMA KOICHI (US)
ANDERSON BRENT A (US)
RIZZOLO MICHAEL (US)
CLEVENGER LAWRENCE A (US)
Application Number:
PCT/CN2023/111422
Publication Date:
February 15, 2024
Filing Date:
August 07, 2023
Export Citation:
Assignee:
IBM (US)
IBM CHINA CO LTD (CN)
IBM CHINA CO LTD (CN)
International Classes:
H10B61/00
Foreign References:
| CN114823508A | 2022-07-29 | |||
| US20210167059A1 | 2021-06-03 | |||
| CN113178444A | 2021-07-27 | |||
| KR20220060974A | 2022-05-12 |
Attorney, Agent or Firm:
ZHONGZI LAW OFFICE (CN)
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