Title:
MRAM MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/185065
Kind Code:
A1
Abstract:
The present invention provides an MRAM manufacturing method, comprising: providing a prefabricated substrate structure, which is provided thereon with an array region bottom interconnection line, a bottom electrode, a magnetic tunnel junction which are formed in an array region, a logic region bottom interconnection line formed in a logic region, and a first dielectric layer; forming a top electrode material layer and a hard mask material layer on the surface of the magnetic tunnel junction; photoetching and etching the top electrode material layer and the hard mask material layer to form a top electrode and a hard mask layer; backfilling a medium, taking the hard mask layer as a grinding stop layer, and grinding the backfilled medium to a height equal to the height of the hard mask layer; selectively removing the hard mask layer to self-align to form a through hole in the top of the array region; and independently preparing a logic region through hole. According to the present invention, the stability of an MRAM manufacturing process can be improved.
Inventors:
ZHENG ZE JIE (CN)
WANG YUE JIN (CN)
HE SHI KUN (CN)
WANG YUE JIN (CN)
HE SHI KUN (CN)
Application Number:
PCT/CN2022/136354
Publication Date:
October 05, 2023
Filing Date:
December 02, 2022
Export Citation:
Assignee:
ZHEJIANG HIKSTOR TECH CO LTD (CN)
International Classes:
H01L21/768
Foreign References:
| CN111211109A | 2020-05-29 | |||
| CN109994500A | 2019-07-09 | |||
| CN113948493A | 2022-01-18 | |||
| US20090291388A1 | 2009-11-26 | |||
| CN109994602A | 2019-07-09 |
Attorney, Agent or Firm:
BEIJING LTXT INTELLECTUAL PROPERTY LAW LLC (CN)
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