MRAM WITH DOPED SILICON-GERMANIUM-TIN ALLOY ELECTRODES

Title:

MRAM WITH DOPED SILICON-GERMANIUM-TIN ALLOY ELECTRODES

Document Type and Number:

WIPO Patent Application WO/2024/055891

Kind Code:

A1

Abstract:

A semiconductor device and methods forming the device is disclosed. The semiconductor device includes a bottom electrode, a magnetic tunnel junction (MTJ) stack on the bottom electrode, and a top electrode (136,236) on the MTJ stack. At least one of the bottom electrode and the top electrode (136,236) includes doped SiGeSn.

Inventors:

HASHEMI POUYA (US)
REZNICEK ALEXANDER (US)

Application Number:

PCT/CN2023/117424

Publication Date:

March 21, 2024

Filing Date:

September 07, 2023

Export Citation:

Click for automatic bibliography generation Help

Assignee:

IBM (US)
IBM CHINA CO LTD (CN)

International Classes:

H10N50/10; H10N50/01

Domestic Patent References:

WO2021181172A1

2021-09-16

Foreign References:

US20220199898A1	2022-06-23
US9660179B1	2017-05-23
CN111146326A	2020-05-12

Attorney, Agent or Firm:

ZHONGZI LAW OFFICE (CN)

Download PDF:

View/Download PDF PDF Help

Previous Patent: AUTO-WRAPPERING TOOLS WITH GUIDANCE FROM EXEMPLAR COMMANDS

Next Patent: TENT FRAME POLE