Title:
MULTI-BAND LIGHT EMITTING DIODE
Document Type and Number:
WIPO Patent Application WO/2023/277608
Kind Code:
A1
Abstract:
Provided is a multi-band light emitting diode. A light emitting diode according to one embodiment comprises: a first conductivity-type semiconductor layer; a V-pit generation layer which is located on the first conductivity-type semiconductor layer and has a first V-pit of a first entrance width; a stress relief layer which is located on the V-pit generation layer and provides a second V-pit of a second entrance width on the first V-pit, the second entrance width being greater than the first entrance width of the V-pit; an active layer located on the stress relief layer, the active layer including a first active layer region formed on a planar surface of the stress relief layer and a second active layer region formed in the second V-pit; and a second conductivity-type semiconductor layer disposed on the active layer.
Inventors:
MIN DAE HONG (KR)
BAEK YONG HYUN (KR)
KANG JI HUN (KR)
BAEK YONG HYUN (KR)
KANG JI HUN (KR)
Application Number:
PCT/KR2022/009412
Publication Date:
January 05, 2023
Filing Date:
June 30, 2022
Export Citation:
Assignee:
SEOUL VIOSYS CO LTD (KR)
International Classes:
H01L33/12; H01L33/02; H01L33/06; H01L33/22; H01L33/32
Foreign References:
| KR20180080592A | 2018-07-12 | |||
| KR20120084839A | 2012-07-31 | |||
| KR20200009847A | 2020-01-30 |
Other References:
CHANG CHIAO-YUN; LI HENG; SHIH YANG-TA; LU TIEN-CHANG: "Manipulation of nanoscale V-pits to optimize internal quantum efficiency of InGaN multiple quantum wells", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, vol. 106, no. 9, 2 March 2015 (2015-03-02), 2 Huntington Quadrangle, Melville, NY 11747, XP012195247, ISSN: 0003-6951, DOI: 10.1063/1.4914116
WANG X.; JIA H.; GUO L.; XING Z.; WANG Y.; PEI X.; ZHOU J.; CHEN H.: "White light-emitting diodes based on a single InGaN emission layer", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, vol. 91, no. 16, 18 October 2007 (2007-10-18), 2 Huntington Quadrangle, Melville, NY 11747, pages 161912 - 161912-3, XP012099726, ISSN: 0003-6951, DOI: 10.1063/1.2800797
WANG X.; JIA H.; GUO L.; XING Z.; WANG Y.; PEI X.; ZHOU J.; CHEN H.: "White light-emitting diodes based on a single InGaN emission layer", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, vol. 91, no. 16, 18 October 2007 (2007-10-18), 2 Huntington Quadrangle, Melville, NY 11747, pages 161912 - 161912-3, XP012099726, ISSN: 0003-6951, DOI: 10.1063/1.2800797
Attorney, Agent or Firm:
AIP PATENT & LAW FIRM (KR)
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